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Type 2 data, therefore, shows that V,, sometimes decreases even as the cumulative dose increases. This fact could not be directly determined by type 1 data alone. However, it is an essential fact since it shows dramatically that valid models for the irradiation-induced change in MOS characteristics must allow for V,, to decrease as well as to increase, even though D continues to increase monotonically with time. Some widely accepted models, unfortunately, do not conform to this requirement ! Since the decrease occurred even while Vgrremained positive, it must have been the decrease in magnitude of applied field alone, rather than the polarity of the field, that caused the flat-band voltage to decrease.
This causes a kink to appear in the curve between segments e and f of Fig. 13c even though, as shown in Fig. 13a, the sequence of values of Vgrand D have both continued to increase in a uniform manner. The nondynamic equilibrium behavior exhibited in segment f would continue indefinitely if it were not for the sudden switch from positive to negative increments in gate-bias voltage occurring at Vgr = + 10 V and D = 27 units as shown in Fig. 13a. In segment g, the device is once more being brought closer to a dynamic equilibrium mode, since Vgr is decreasing between irradiation increments.
Global view for modeling various traps and trapping mechanisms for low-, medium-, and high-dose ranges. cated global model that simultaneously incorporates all of the subcubes in Fig. 5, one is forced to formulate unique models for various convenient separate combinations of the 27 different cases. Only three dimensions have been shown in Fig. 5 . When other important physical mechanisms are considered as well, the three-dimensional figure becomes a multidimensional block and the total number of possibilities becomes enormous.